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Power Discrete Devices Silicon Carbide SBD TO-220AC For LED Lighting

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Power Discrete Devices Silicon Carbide SBD TO-220AC For LED Lighting

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Brand Name :Lingxun
Place of Origin :China
Certification :ISO9001,ISO14001,ROHS,REACH
MOQ :Confirm quantity based on part number
Price :Confirm price based on part number
Packaging Details :Confirm package based on part number
Delivery Time :comfirm
Payment Terms :T/T payment
Supply Ability :600KK/year
Power :High Power
High Light :Silicon carbide material is one of the substrate materials of early LED light-emitting diodes, although gallium nitride leds are widely used for higher efficiency, but silicon carbide is still used in high power LED heat sinks.
Device Type :Power Discrete Devices
Heat Resistance :High Temperature Resistance
Efficiency :High Efficiency
Frequency :High Frequency
Material :Silicon Carbide
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View Product Description

Power Discrete Devices Silicon Carbide Schottky Barrier Diode For LED Lighting

Product Description:

The Silicon Carbide Schottky Barrier Diode (SBD) is a high power, high efficiency diode that is made using silicon carbide material. It stands out among other diodes due to its high breakdown voltage, low reverse recovery charge, fast switching speed, and robustness against high temperatures and radiation. These attributes make it a cornerstone of modern power electronics technology, with applications spanning across various industries, from electric vehicles and renewable energy systems to industrial drives and consumer electronics.

The Silicon Carbide SBD is particularly useful in motor control applications, where low reverse recovery charge is required to improve efficiency and reduce switching losses. Its high temperature resistance also makes it ideal for use in industrial drives and other high-temperature environments, where durability is of utmost importance.

The Silicon Carbide SBD is a reliable and efficient solution for a wide range of power electronics applications. Its high power capabilities and high efficiency make it an ideal choice for electric vehicles, renewable energy systems, and other high-power applications. Its robustness against high temperatures and radiation also make it suitable for use in harsh environments, where durability and reliability are critical.

Overall, the Silicon Carbide SBD is a high-performance diode that offers superior performance and durability compared to other diodes. Its use of silicon carbide material allows for high temperature resistance, which is essential for industrial drives and other high-temperature applications. Its low reverse recovery charge and fast switching speed also make it ideal for motor control applications, where efficiency is a critical factor.

Features:

  • Product Name: Silicon Carbide SBD
  • Frequency: High Frequency
  • Efficiency: High Efficiency
  • Material: Silicon Carbide
  • High Light: Silicon Carbide Diodes Stand Out Due To Their High Breakdown Voltage, Low Reverse Recovery Charge, Fast Switching Speed, And Robustness Against High Temperatures And Radiation. Their Applications Span Across Various Industries, From Electric Vehicles And Renewable Energy Systems To Industrial Drives And Consumer Electronics, Making Them A Cornerstone Of Modern Power Electronics Technology.
  • Heat Resistance: High Temperature Resistance
  • Durability: Long lasting and can withstand high temperatures and radiation.
  • Smaller Footprint: Takes up less space in electronic devices.
  • Low On-Resistance: Minimizes power loss and heat generation.

Technical Parameters:

Efficiency High Efficiency
High Light Silicon Carbide Diodes Stand Out Due To Their High Breakdown Voltage, Low Reverse Recovery Charge, Fast Switching Speed, And Robustness Against High Temperatures And Radiation. Their Applications Span Across Various Industries, From Electric Vehicles And Renewable Energy Systems To Industrial Drives And Consumer Electronics, Making Them A Cornerstone Of Modern Power Electronics Technology.
Power High Power
Material Silicon Carbide
Frequency High Frequency
Device Type Power Discrete Devices
Heat Resistance High Temperature Resistance
Battery Chargers Increase efficiency and speed up charging time with high frequency capability
Defense Electronics Utilize the robustness and high temperature resistance of Silicon Carbide SBD in defense electronic applications

Applications:

The Lingxun Silicon Carbide Schottky Barrier Diode (SBD) is a high-performance power discrete device that meets the requirements of ISO9001, ISO14001, ROHS, and REACH certifications. With a supply ability of 600KK/year, these SBDs are manufactured in China and are available for purchase in various quantities based on part number.

These SBDs are known for their high temperature resistance and high frequency capabilities, making them ideal for a range of industrial applications. They have a high breakdown voltage, low reverse recovery charge, and fast switching speed, making them a cornerstone of modern power electronics technology. They can be used in electric vehicles, renewable energy systems, industrial drives, and consumer electronics.

In addition, these SBDs have excellent radiation hardness, making them suitable for use in aerospace and defense applications. They are robust against high temperatures and radiation, making them ideal for use in harsh environments where other devices may fail.

The price and packaging details of these SBDs vary based on part number, and delivery time can be confirmed at the time of purchase. Payment terms are T/T payment, and the minimum order quantity is confirmed based on the part number.

Choose Lingxun Silicon Carbide SBDs for high-performance, reliable power electronics devices that are suitable for a range of industrial, aerospace, and defense applications.

Power Discrete Devices Silicon Carbide SBD TO-220AC For LED Lighting

Q1.Who are we?

A:We are based in Guangdong, China,factory start from 2012,is a national high-tech enterprise that focuses on packaging and testing of power semiconductor devices.currently has more than 180 has more than 180 employees and more than 10000 square meters area.We provide over 600 KK high-quality power semiconductor device per annum.

Q2.What is your product line?

A:Existing main production lines include Schottky,low VF Schottky,Fast Recovery Diodes, High Voltage Mosfet, Medium and Low Voltage Mosfet, Super Junction Mosfet, IGBT, SiC shottkly Barrier Diode and Sic Mosfet etc.

Q3.What is your product’s application?

A:Widely used in various fields such as power adapters,LED lighting, brushless motors, lithium battery management, inverters,energy storage and charging pile, etc.

Q4.What is your competitive advantage?

A:1.Strong capabilities factory.We have our own assembly and test factory,fixed investment exceeding 70 million yuan.Having the top automated Wire Bond equipment,provide over 600KK semiconductor power device annually.

2. Service advantages,A stable supply system,Sustainable and stable supply of products.Our own laboratory can quickly and effectively cooperate with validation.

3. Quality assurance,The most mainstream MES system digital factory in the field of packing and testing, certified by ISO9001 2015 version and IATF16949.

4. Product Upgrading,Continuously research and develop new specifications and packaging shapes to meet the application needs of more customers.

Q5.What is your terms of packing?

A:Usually,different packages have different packing.TO-252/263 is reel+sealed bag+inner box+carton.TO-220/247 is tube+inner box+carton.

Q6.What is your MOQ?

A:We provide samples for each item.MOQ depends on your order quantity.

Q7.What is your guarantee quality?

A: Offer samples for testing. Ensure that the bulk product is consistent with the sample. If there is any change, the sample will be provided again for testing. 100% test and check all product before delivery.

Q8.Do you accept customization?

A:Yes,send me your requirement!

Q9.How to contact you?

A:Send your inquire details in the below,Click”Send”,NOW!!!

Any other more questions, please feel free to contact us. We are always at your service !

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