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Guangdong Lingxun Microelectronics Co., Ltd
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Inverter IGBT (40)
High Power IGBT (41)
High Power MOSFET (41)
Super Junction MOSFET (51)
Low Voltage MOSFET (84)
High Voltage MOSFET (59)
Schottky Barrier Diodes (83)
Fast Recovery Diodes (52)
Low VF Schottky (68)
High Power Semiconductor (28)
Silicon Carbide MOSFET (21)
Silicon Carbide SBD (21)
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60A 650V N Channel IGBT For Energy Storage Solar String Inverter
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Product Categories
Inverter IGBT
[40]
High Power IGBT
[41]
High Power MOSFET
[41]
Super Junction MOSFET
[51]
Low Voltage MOSFET
[84]
High Voltage MOSFET
[59]
Schottky Barrier Diodes
[83]
Fast Recovery Diodes
[52]
Low VF Schottky
[68]
High Power Semiconductor
[28]
Silicon Carbide MOSFET
[21]
Silicon Carbide SBD
[21]
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Guangdong Lingxun Microelectronics Co., Ltd
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City:
dongguan
Province/State:
guangdong
Country/Region:
china
Contact Person:
MrsQinqin
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60A 650V N Channel IGBT For Energy Storage Solar String Inverter
Products Detailed
60A 650V N-Channel High Power IGBT For Energy Storage Solar String Inverter MAIN CHARACTERISTICS Ic @TC=100℃ 60A VCE 650V VCE(sat)-typ 1.8V FEATURES • ...
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