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Guangdong Lingxun Microelectronics Co., Ltd
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Inverter IGBT (40)
High Power IGBT (41)
High Power MOSFET (41)
Super Junction MOSFET (51)
Low Voltage MOSFET (84)
High Voltage MOSFET (59)
Schottky Barrier Diodes (83)
Fast Recovery Diodes (52)
Low VF Schottky (68)
High Power Semiconductor (28)
Silicon Carbide MOSFET (21)
Silicon Carbide SBD (21)
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Semiconductor Device High Voltage IGBT 650V-1200V With High Input Impedance
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Product Categories
Inverter IGBT
[40]
High Power IGBT
[41]
High Power MOSFET
[41]
Super Junction MOSFET
[51]
Low Voltage MOSFET
[84]
High Voltage MOSFET
[59]
Schottky Barrier Diodes
[83]
Fast Recovery Diodes
[52]
Low VF Schottky
[68]
High Power Semiconductor
[28]
Silicon Carbide MOSFET
[21]
Silicon Carbide SBD
[21]
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Guangdong Lingxun Microelectronics Co., Ltd
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City:
dongguan
Province/State:
guangdong
Country/Region:
china
Contact Person:
MrsQinqin
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Semiconductor Device High Voltage IGBT 650V-1200V With High Input Impedance
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