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Guangdong Lingxun Microelectronics Co., Ltd
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Inverter IGBT (40)
High Power IGBT (41)
High Power MOSFET (41)
Super Junction MOSFET (51)
Low Voltage MOSFET (84)
High Voltage MOSFET (59)
Schottky Barrier Diodes (83)
Fast Recovery Diodes (52)
Low VF Schottky (68)
High Power Semiconductor (28)
Silicon Carbide MOSFET (21)
Silicon Carbide SBD (21)
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High Power Semiconductor
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Low Leakage N Channel High Power MOSFET TO-220F TO-263C TO-247AC
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Product Categories
Inverter IGBT
[40]
High Power IGBT
[41]
High Power MOSFET
[41]
Super Junction MOSFET
[51]
Low Voltage MOSFET
[84]
High Voltage MOSFET
[59]
Schottky Barrier Diodes
[83]
Fast Recovery Diodes
[52]
Low VF Schottky
[68]
High Power Semiconductor
[28]
Silicon Carbide MOSFET
[21]
Silicon Carbide SBD
[21]
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Guangdong Lingxun Microelectronics Co., Ltd
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City:
dongguan
Province/State:
guangdong
Country/Region:
china
Contact Person:
MrsQinqin
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Low Leakage N Channel High Power MOSFET TO-220F TO-263C TO-247AC
Products Detailed
Product Description: Voltage Low Leakage Power MOSFET The N type High Power Semiconductor is a type of semiconductor that features low leakage and ...
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