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Guangdong Lingxun Microelectronics Co., Ltd
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Inverter IGBT (40)
High Power IGBT (41)
High Power MOSFET (41)
Super Junction MOSFET (51)
Low Voltage MOSFET (84)
High Voltage MOSFET (59)
Schottky Barrier Diodes (83)
Fast Recovery Diodes (52)
Low VF Schottky (68)
High Power Semiconductor (28)
Silicon Carbide MOSFET (21)
Silicon Carbide SBD (21)
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Inverter IGBT
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60A 650V Low switching loss Low Frequency Power IGBT For Boost
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Product Categories
Inverter IGBT
[40]
High Power IGBT
[41]
High Power MOSFET
[41]
Super Junction MOSFET
[51]
Low Voltage MOSFET
[84]
High Voltage MOSFET
[59]
Schottky Barrier Diodes
[83]
Fast Recovery Diodes
[52]
Low VF Schottky
[68]
High Power Semiconductor
[28]
Silicon Carbide MOSFET
[21]
Silicon Carbide SBD
[21]
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Guangdong Lingxun Microelectronics Co., Ltd
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City:
dongguan
Province/State:
guangdong
Country/Region:
china
Contact Person:
MrsQinqin
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60A 650V Low switching loss Low Frequency Power IGBT For Boost
Products Detailed
60A 650V Low switching loss Low Frequency Power IGBT For Boost MAIN CHARACTERISTICS Ic @TC=100℃ 60A VCE 650V VCE(sat)-typ 1.7V FEATURES • Positive ...
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