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Guangdong Lingxun Microelectronics Co., Ltd
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1 Years
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Inverter IGBT (40)
High Power IGBT (41)
High Power MOSFET (41)
Super Junction MOSFET (51)
Low Voltage MOSFET (84)
High Voltage MOSFET (59)
Schottky Barrier Diodes (83)
Fast Recovery Diodes (52)
Low VF Schottky (68)
High Power Semiconductor (28)
Silicon Carbide MOSFET (21)
Silicon Carbide SBD (21)
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60A600V High Speed Switching Diode With Low Leakage Current MUR6060PT
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Product Categories
Inverter IGBT
[40]
High Power IGBT
[41]
High Power MOSFET
[41]
Super Junction MOSFET
[51]
Low Voltage MOSFET
[84]
High Voltage MOSFET
[59]
Schottky Barrier Diodes
[83]
Fast Recovery Diodes
[52]
Low VF Schottky
[68]
High Power Semiconductor
[28]
Silicon Carbide MOSFET
[21]
Silicon Carbide SBD
[21]
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Guangdong Lingxun Microelectronics Co., Ltd
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City:
dongguan
Province/State:
guangdong
Country/Region:
china
Contact Person:
MrsQinqin
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60A600V High Speed Switching Diode With Low Leakage Current MUR6060PT
Products Detailed
60A600V High Speed Switching Diode With Low Leakage Current MUR6060PT Part Number Package Die Io (A) VBR @IR VF(25℃) IR(25℃) VF(125℃) IR (125℃ IFSM (A...
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