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Guangdong Lingxun Microelectronics Co., Ltd
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Inverter IGBT (49)
High Power IGBT (51)
High Power MOSFET (51)
Super Junction MOSFET (51)
Low Voltage MOSFET (84)
High Voltage MOSFET (59)
Schottky Barrier Diodes (82)
Fast Recovery Diodes (51)
Low VF Schottky (66)
High Power Semiconductor (28)
Silicon Carbide MOSFET (21)
Silicon Carbide SBD (21)
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Inverter IGBT
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650V-1200V Collector-Emitter Voltage Inverter IGBT with 50ns Reverse Recovery Time and TO-247 Package Type
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Product Categories
Inverter IGBT
[49]
High Power IGBT
[51]
High Power MOSFET
[51]
Super Junction MOSFET
[51]
Low Voltage MOSFET
[84]
High Voltage MOSFET
[59]
Schottky Barrier Diodes
[82]
Fast Recovery Diodes
[51]
Low VF Schottky
[66]
High Power Semiconductor
[28]
Silicon Carbide MOSFET
[21]
Silicon Carbide SBD
[21]
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Guangdong Lingxun Microelectronics Co., Ltd
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City:
dongguan
Province/State:
guangdong
Country/Region:
china
Contact Person:
MrsQinqin
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650V-1200V Collector-Emitter Voltage Inverter IGBT with 50ns Reverse Recovery Time and TO-247 Package Type
Products Detailed
Product Description: The Inverter IGBT is a high-quality power semiconductor device designed for efficient power conversion in a variety of applicatio...
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